Biosensor and sensing cell array using the same

ABSTRACT

A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a divisional of U.S. patent application Ser.No. 11/963,614, filed on Dec. 21, 2007, now U.S. Pat. No. 7,609,547which is a divisional of Ser. No. 11/357,214, filed Feb. 21, 2006, nowU.S. Pat. No. 7,333,361, issued on Feb. 19, 2008, which is a divisionalof Ser. No. 10/651,027, filed Aug. 29, 2003, now U.S. Pat. No.7,031,186, issued on Apr. 18, 2006, which claims priority to Koreanpatent application numbers 2002-82035, 2002-82036, 2002-82037,2002-82038, and 2002-82039, all of which were filed on Dec. 21, 2002,all of which are incorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a biosensor and a sensing cell array,and more specifically, to a technology to analyze ingredients ofadjacent materials depending on electrical characteristics by using adielectric constant sensor and magnetization characteristics of amagnetization pair detection sensor.

2. Description of the Prior Art

Most semiconductor memory manufacturers have recently developed MTJ(Magnetic Tunnel Junction) and GMR (Giant Magneto Resistive) devicesusing ferromagnetic materials.

The MTJ device, that comprises two magnetic layers separated by aninsulating layer, utilizes spin magnetic permeation phenomenon. In theMTJ device, current better permeates the insulating layer when spindirections are parallel than when anti-parallel in the two magneticlayers. The GMR device, that comprises two magnetic layers separated bya non-magnetic layer, utilizes a giant magnetoresistive phenomenon. Inthe GMR device, resistance is more differentiated when spin directionsare anti-parallel than when parallel in the two magnetic layers.

FIGS. 1 a and 1 b are diagrams illustrating the operation principle of aconventional MTJ device.

The conventional MTJ device comprises a free ferromagnetic layer 1, atunnel junction layer 2 and a fixed ferromagnetic layer 3.

When magnetic field lines in the fixed ferromagnetic layer 3 aretransmitted into the free ferromagnetic layer 1 through adjacentmaterials, magnetoresistance varies according to magneticsusceptibilities of the adjacent materials. The magnetic flux density isrepresented by B=μH (here, μ=magnetic susceptibility, H=magnetic flux).The value of magnetic flux density B varies according to the magneticsusceptibility μ.

As shown in FIG. 1 a, if materials having high magnetic susceptibility μexist between the fixed ferromagnetic layer 3 and the free ferromagneticlayer 1, the magnetic flux density B of the free ferromagnetic layer 1increases. On the other hand, as shown in FIG. 1 b, if materials havinglow magnetic susceptibility μ exist between the fixed ferromagneticlayer 3 and the free ferromagnetic layer 1, the magnetic flux density Bof the free ferromagnetic layer 1 decreases. As a result, the value ofmagnetoresistance depends on the magnetic susceptibility μ of theadjacent materials between the fixed ferromagnetic layer 3 and the freeferromagnetic layer 1.

FIG. 2 is an analysis table illustrating magnetic susceptibilitydepending on ingredients of materials adjacent to a MTJ device.

The magnetization constant μ varies depending on kinds and size ofingredients of the adjacent materials.

FIG. 3 is a diagram illustrating capacitance of a general capacitor.

The capacitor comprises a first electrode 4 and a second electrode 5.The capacitor has a different dielectric constant ∈ depending on thedistance d between the first electrode 4 and the second electrode 5 andon the area S of the capacitor. That is, the capacitance is C=∈S/d(here, S=the area of the capacitor, and d=the distance between the twoelectrodes). The capacitance C is proportional to the dielectricconstant ∈ and the area S of the capacitor, and inversely proportionalto the distance d.

FIG. 4 is a diagram illustrating a voltage transmission characteristicof the general capacitor.

Two capacitors connected between a driving plate line PL and a groundvoltage terminal have capacitances C1 and C2. A node voltage between thetwo capacitors is Vs. A driving voltage supplied to the plateline PL bythe two capacitors is a driving plate voltage V_PL. Here, the nodevoltage Vs={C1/(C1+C2)}×V_PL. The node voltage Vs is proportional to thecapacitance C1, and is, inverse proportional to the capacitance C2.

FIG. 5 shows that dielectric constant ∈ is differentiated depending onthe kinds and sizes of adjacent materials.

Due to improvement of living environments, people have become moreinterested in health and life prolongation. After diseases threateninghuman life occur, people have emphasized preventing the expecteddiseases rather than simply curing them. Also, they have struggled tocontrol environmental pollution.

As a result, systems to detect various disease causing factors,pollution and toxic substance have been required. To meet this trend,analysis methods of adjacent materials place more weight on biosensorswith other physical and chemical sensors.

In order to examine for human diseases using these adjacent materialdetecting systems, sensing methods are needed for analyzing ingredientsof blood, for analyzing ingredients of compounds or for recognizing theskin. However, conventional sensing methods depend on physical orchemical methods for analyzing material ingredients. As a result, largeequipment and cost for are required for such testing. Since it takes along time for such tests, it is difficult, to analyze ingredients ofvarious adjacent materials.

SUMMARY OF THE INVENTION

In order to quickly analyze ingredients of various materialsquantitative analysis methods are required to analyze the ingredients ofmaterials surrounding, beside or proximate to sensors (herein referredto as “adjacent material”) using the above-described magnetoresistivesensor or the giant magnetoresistive sensor. Also, the quantitativeanalysis method using the different dielectric constant of theabove-described capacitor depending on kinds and sizes of adjacentmaterials is useful.

Accordingly, it is an object of the present invention to identifyingredients of adjacent materials by differentiatiating magneticsusceptibility and electrical properties using a plurality of MTJsensors and/or GMR sensors to analyze the ingredients quantitatively.

It is another object of the present invention to sense different valuesof dielectric constant depending on the kinds and sizes of ingredientsof adjacent materials in order to analyze the ingredients of adjacentmaterials as electrical ingredients.

In an embodiment, a biosensor comprises a MTJ (Magnetic Tunnel Junction)device coupled to a switching device and a sense wordline. The MTJdevice comprises a free ferromagnetic layer, a tunnel junction layer anda fixed ferromagnetic layer. The switching device, formed under thefixed ferromagnetic layer of the MTJ device, outputs current sensed inthe MTJ device into a sense bitline. The sense wordline, formed on thefree ferromagnetic layer, applies different bias voltages to the MTJdevice. When a magnetic field line of the fixed ferromagnetic layer istransmitted into the free ferromagnetic layer, the current outputtedfrom the switching device varies according to the magnetic flux densitythat depends on the adjacent materials.

In an embodiment, a biosensor comprises a GMR (Giant Magneto Resistance)device coupled to a switching device and a sense wordline. The GMRdevice comprises a free ferromagnetic layer, a conductive resistor and afixed ferromagnetic layer. The switching device, formed under the fixedferromagnetic layer of the GMR device, outputs current sensed in the GMRdevice into a sense bitline. The sense wordline, connected to anelectrode of the conductive resistor, applies different bias voltages tothe GMR device. When a magnetic field of the fixed ferromagnetic layeris transmitted into the free ferromagnetic layer, the current outputtedfrom the switching device varies according to the magnetic flux densitythat depends on the adjacent materials.

In an embodiment, a sensing cell array using a biosensor comprises aplurality of sense wordlines, a plurality of sense bitlines, a pluralityof magnetization pair detection sensors and a plurality of senseamplifiers. The plurality of sense wordlines are arranged parallel to aplurality of wordlines. The plurality of sense bitlines are arrangedperpendicular to the plurality of sense wordlines and the plurality ofwordlines. The plurality of magnetization pair detection sensors,connected to the plurality of sense wordlines, the plurality ofwordlines and the plurality of sense bitlines, sense different values ofmagnetic flux density depending on adjacent materials. The plurality ofsense amplifiers are connected to the plurality of sense bitlines.

In an embodiment, a biosensor comprises a MTJ device, a ferromagneticmaterial and a switching device. The MTJ device comprises a freeferromagnetic layer to receive a sense wordline voltage, a tunneljunction layer and a fixed ferromagnetic layer. The ferromagneticmaterial, formed on the free ferromagnetic layer, forms a magnetic fielddepending on the magnetic coupling with the free ferromagnetic layer.The switching device, formed under the fixed ferromagnetic layer of theMTJ device, outputs current sensed in the MTJ device into a sensebitline. Here, the current outputted from the switching device variesaccording to magnetoresistive values that depend on adjacent materials.

In an embodiment, a biosensor comprises a MTJ device coupled to acurrent line and a switching device. The MTJ device comprises a freeferromagnetic layer to receive a sense wordline voltage, a tunneljunction layer and a fixed ferromagnetic layer. The current line, formedon the free ferromagnetic layer, receives a forcing wordline voltage andforms a magnetic field depending on the magnetic coupling with the freeferromagnetic layer. The switching device, formed under the fixedferromagnetic layer of the MTJ device, outputs current sensed in the MTJdevice into a sense bitline. Here, the current outputted from theswitching device varies according to magnetoresistive values dependingon adjacent materials.

In an embodiment, a sensing cell array using a biosensor comprises aplurality of sense wordlines, a plurality of sense bitlines, a pluralityof magnetoresistive sensors and a plurality of sense amplifiers. Theplurality of sense wordlines are arranged parallel to a plurality ofwordlines. The plurality of sense bitlines are arranged perpendicular tothe plurality of sense wordlines and the plurality of wordlines. Theplurality of magnetoresistive sensors are connected to the plurality ofsense wordlines, the plurality of wordlines and the plurality of sensebitlines. The plurality of sense amplifiers are connected to theplurality of sense bitlines. Here, depending on ingredients of adjacentmaterials formed in a magnetic field induced by magnetic coupling withmagnetic materials, each magnetoresistive sensor senses differentmagnetoresistive values according to magnetic fields generated from themagnetic materials.

In an embodiment, a sensing cell array using a biosensor, comprises aplurality of sense wordlines, a plurality of sense bitlines, a pluralityof magnetoresistive sensors and a plurality of sense amplifiers. Theplurality of sense wordlines are arranged parallel to a plurality ofwordlines and a plurality of forcing wordlines. The plurality of sensebitlines are arranged perpendicular to the plurality of sense wordlines,the plurality of wordlines and the plurality of forcing wordlines. Theplurality of magnetoresistive sensors, connected between the pluralityof sense wordlines, the plurality of wordlines, the plurality of forcingwordlines and the plurality of sense bitlines, sense differentmagnetoresistive values according to a magnetic field generated by acurrent line where forcing wordline voltage is applied. The plurality ofsense amplifiers are connected to the plurality of sense bitlines.

In an embodiment, a biosensor comprises a transistor and a sensingcapacitor. The transistor has a gate connected to a wordline and a drainconnected to a sensing bitline. The sensing capacitor has a firstelectrode connected to a sensing plateline and a second electrodeconnected to a source of the transistor. Here, a sensing voltageoutputted from the transistor varies according to dielectric constantsof the sensing capacitor.

In an embodiment, a sensing cell array using a biosensor comprises aplurality of sensing platelines, plurality of sensing bitlines, aplurality of dielectric constant sensors and a plurality of senseamplifiers. The plurality of sensing platelines are arranged parallel toa plurality of wordlines. The plurality of sensing bitlines are arrangedperpendicular to the plurality of wordlines and the plurality of sensingplatelines. The plurality of dielectric constant sensors, connected tothe plurality of wordlines, the plurality of sensing platelines and theplurality of sensing bitlines, sense different dielectric constants ofadjacent materials formed between two electrodes of a capacitor. Theplurality of sense amplifiers are connected to the plurality of sensingbitlines.

In an embodiment, a biosensor comprises a MTJ device, a second freeferromagnetic layer, a current line and a switching device. The MTJdevice comprises a first free ferromagnetic layer, a tunnel junctionlayer and a fixed ferromagnetic layer. The second free ferromagneticlayer has the same direction of magnetic flux as that of the first freeferromagnetic layer and has a predetermined interval with the first freeferromagnetic layer. The current line, formed under the first freeferromagnetic layer and the second free ferromagnetic layer, receivescurrent to induce a magnetic field. The switching device, formed underthe current line, outputs current sensed in the MTJ device into a sensebitline. Here, the current outputted from the switching device variesaccording to magnetic susceptibility of adjacent materials exposed on asensing hole formed between the first free ferromagnetic layer and thesecond free ferromagnetic layer.

In an embodiment, a biosensor comprises a GMR device, a second freeferromagnetic layer, a current line and a switching device. The GMRdevice comprises a first free ferromagnetic layer, a sensing conductivelayer and a fixed ferromagnetic layer. The second free ferromagneticlayer has the same direction of magnetic flux as that of the first freeferromagnetic layer and has a predetermined interval with the first freeferromagnetic layer. The current line, formed under the first freeferromagnetic layer and the second free ferromagnetic layer, receivescurrent to induce a magnetic field. The switching device, formed underthe current line, outputs current sensed in the GMR device into a sensebitline. Here, the current outputted from the switching device variesaccording to magnetic susceptibility of adjacent materials exposed on asensing hole formed between the first free ferromagnetic layer and thesecond free ferromagnetic layer.

In an embodiment, a sensing cell array using a biosensor comprises aplurality of wordlines, a plurality of sense bitlines, a plurality ofmagnetization hole detection sensors and a plurality of senseamplifiers. The plurality of wordlines are arranged parallel to aplurality of forcing wordlines and a plurality of sense wordlines. Theplurality of sense bitlines are arranged perpendicular to the pluralityof forcing wordlines, the plurality of sense wordlines and the pluralityof wordline. The plurality of magnetization hole detection sensors,connected to the plurality of forcing wordline, the plurality of sensewordlines, the plurality of wordlines and the plurality of sensebitlines, sense different magnetic susceptibility depending on adjacentmaterials exposed on a sensing hole formed between the two freeferromagnetic layers. The plurality of sense amplifiers are connected tothe plurality of sense bitlines.

In an embodiment, a biosensor comprises a GMR device, a magneticmaterial, a sense wordline and a switching device. The GMR devicecomprises a free ferromagnetic layer, a conductive resistor and a fixedferromagnetic layer. The magnetic material, formed on the freeferromagnetic layer, forms a magnetic field depending on magneticcoupling with the free ferromagnetic layer. The sense wordline, formedon a portion of the conductive resistor, receives a sense wordlinevoltage. The switching device, formed under the other portion of theconductive resistor, outputs current sensed in the GMR device into asense bitline. Here, the current outputted from the switching devicevaries according to the affect on magnetoresistive values of adjacentmaterials formed on the magnetic field.

In an embodiment, a biosensor comprises a GMR device, a forcingwordline, a sense wordline and a switching device. The GMR devicecomprises a free ferromagnetic layer, conductive resistor and a fixedferromagnetic layer. The forcing wordline, formed on the freeferromagnetic layer, receives a forcing wordline voltage and forming amagnetic field depending on magnetic coupling with the freeferromagnetic layer. The sense wordline is formed on a portion of theconductive resistor. The switching device, formed under the otherportion of the conductive resistor, outputs current sensed in the GMRdevice into a sense bitline. Here, the current outputted from theswitching device varies according to magnetoresistive values of adjacentmaterials formed on the magnetic field.??

In an embodiment, a sensing cell array using a biosensor comprises aplurality of wordlines, a plurality of sense bitlines, a plurality ofgiant magnetoresistive sensors, a plurality of sense wordline driversand a plurality of sense amplifiers. The plurality of wordlines arearranged parallel to a plurality of sense wordlines. The plurality ofsense bitlines are arranged perpendicular to the plurality of sensewordlines and the plurality of wordlines. The plurality of giantmagnetoresistive sensors, connected to the plurality of sense wordline,the plurality of wordlines and the plurality of sense bitlines, sensemagnetoresistive values of adjacent materials formed on a magnetic fieldinduced by magnetic coupling with, magnetic materials. The plurality ofsense wordline drivers apply different bias voltages to the plurality ofsense wordlines. The plurality of sense amplifiers are connected to theplurality of sense bitlines.

In an embodiment, a sensing cell array using a biosensor comprises aplurality of forcing wordlines, a plurality of sense bitlines, aplurality of giant magnetoresistive sensors, a plurality of sensewordline drivers and a plurality of sense amplifiers. The plurality offorcing wordlines are arranged parallel to a plurality of sensewordlines and a plurality of wordlines. The plurality of sense bitlinesare arranged perpendicular to the plurality of sense wordlines, theplurality of wordlines and the plurality of forcing wordlines. Theplurality of giant magnetoresistive sensors, connected to the pluralityof sense wordlines, the plurality of wordlines, the plurality of forcingwordlines and the plurality of sense bitlines, sense magnetoresistivevalues of adjacent materials formed in a magnetic field induced bymagnetic coupling with the forcing wordlines. The plurality of sensewordline drivers apply different bias voltages to the plurality of sensewordlines. The plurality of sense amplifiers are connected to theplurality of sense bitlines.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 a and 1 b are diagrams illustrating the operation principle of aconventional MTJ device.

FIG. 2 is a table illustrating magnetic susceptibility depending oningredients and sizes of adjacent materials.

FIG. 3 is a diagram illustrating capacitance of a conventionalcapacitor.

FIG. 4 is a diagram illustrating a voltage transmission characteristicof the common capacitor.

FIG. 5 is a table illustrating dielectric constant depending oningredients and sizes of adjacent materials.

FIGS. 6 and 7 are conceptual diagrams illustrating a biosensor and asensing cell array using the same according to an embodiment of thepresent invention.

FIG. 8 is a structural diagram illustrating a magnetization pairdetection sensor using a MTJ device according to an embodiment of thepresent invention.

FIGS. 9 a and 9 b are diagrams illustrating operation characteristics ofthe magnetization pair detection sensor of FIG. 8.

FIGS. 10 a and 10 b are diagrams illustrating ingredient separationdepending on variations in, a sense wordline voltage of themagnetization pair detection sensor of FIG. 8.

FIGS. 11 a to 11 c are structural diagrams illustrating a magnetizationpair detection sensor using a GMR device according to an embodiment ofthe present invention.

FIGS. 12 a and 12 b are diagrams illustrating the operational principleof the magnetization pair detection sensor of FIG. 11.

FIGS. 13 a and 13 b are diagrams illustrating ingredient separationdepending on variations in a sense wordline voltage of the magnetizationpair detection sensor of FIG. 11.

FIGS. 14 to 16 are diagrams illustrating a sensing cell array using amagnetization pair detection sensor according to an embodiment of thepresent invention.

FIG. 17 is an ingredient analysis diagram illustrating a magnetizationpair detection sensor according to an embodiment of the presentinvention.

FIG. 18 is a timing diagram illustrating the operation of a sensing cellarray using a magnetization pair detection sensor according to anembodiment of the present invention.

FIGS. 19 a and 19 b are structural diagrams illustrating amagnetoresistive sensor according to an embodiment of the presentinvention.

FIGS. 20 a and 20 b are diagrams illustrating the operationalcharacteristics of the magnetoresistive sensor of FIG. 19.

FIGS. 21 a to 22 b are diagrams illustrating ingredient separationdepending on variations in a sense wordline voltage of themagnetoresistive sensor of FIG. 19.

FIGS. 23 a and 23 b are layout diagrams illustrating themagentoresistive sensor of FIG. 19.

FIGS. 24 to 27 are diagrams illustrating examples of the sensing cellarray using a magnetoresistive sensor according to an embodiment of thepresent invention.

FIGS. 28 and 29 are ingredient analysis diagrams illustrating themagnetoresistive sensor according to an embodiment of the presentinvention.

FIGS. 30 and 31 are timing diagrams illustrating the operation of thesensing cell array using the magnetoresistive sensor according to anembodiment of the present invention.

FIGS. 32 a to 32 c are structural diagrams illustrating giantmagnetoresistive sensor using magnetic materials according to anembodiment of the present invention.

FIGS. 33 a and 33 b are diagrams illustrating operationalcharacteristics of the giant magnetoresistive sensor of FIG. 32.

FIGS. 34 a and 34 b are diagrams illustrating ingredient separationdepending on variations in a sense wordline voltage of the giantmagnetoresistive sensor of FIG. 32.

FIGS. 35 a and 35 b are diagrams illustrating a giant magnetoresistivesensor using a forcing wordline according to an embodiment of thepresent invention.

FIGS. 36 a and 36 b are diagrams illustrating operation characteristicsof the giant magnetoresistive sensor of FIG. 35.

FIGS. 37 a and 37 b are diagrams illustrating ingredient separationdepending on variations in a forcing wordline voltage of the giantmagnetoresistive sensor of FIG. 35.

FIGS. 38 and 39 are diagrams illustrating a sensing cell array using agiant magnetoresistive sensor according to an embodiment of the presentinvention.

FIGS. 40 and 41 are layout diagrams illustrating a sensing cell arrayusing a giant magnetoresistive sensor according to an embodiment of thepresent invention.

FIGS. 42 and 43 are ingredient analysis diagrams illustrating sensingcell array using a giant magnetoresistive sensor according to anembodiment of the present invention.

FIGS. 44 and 45 are timing diagrams illustrating a sensing cell arrayusing a giant magnetoresistive sensor according to an embodiment of thepresent invention.

FIGS. 46 a and 46 b are structural diagrams illustrating a magnetizationhole detection sensor.

FIGS. 47 a and 47 b are cross-sectional and planar view diagramsillustrating a magnetization hole detection sensor according to anembodiment of the present invention.

FIG. 48 is a diagram illustrating a sensing hole type of a magnetizationhole detection sensor according to an embodiment of the presentinvention.

FIGS. 49 a and 49 b are diagrams illustrating the variation in magneticsusceptibility depending on sizes of sensing holes of a magnetizationhole detection sensor using a MTJ device according to an embodiment ofthe present invention.

FIGS. 50 a and 50 b are structural diagrams illustrating a magnetizationhole detection sensor using a GMR device according to an embodiment ofthe present invention.

FIGS. 51 a and 51 b are diagrams illustrating variations in magneticsusceptibility depending on the size of a sensing hole of themagnetization hole detection sensor of FIG. 50.

FIGS. 52 and 53 are diagrams illustrating examples of a sensing cellarray using a magnetization hole detection sensor according to anembodiment of the present invention.

FIG. 54 is an ingredient analysis diagram illustrating a magnetizationhole detection sensor according to an embodiment of the presentinvention.

FIG. 55 is a timing diagram illustrating a read operation of the sensingcell array using the magnetization hole detection sensor according to anembodiment of the present invention.

FIG. 56 is a diagram illustrating a dielectric constant sensor accordingto an embodiment of the present invention.

FIGS. 57 a and 57 b are cross-sectional and planar view diagramsillustrating the dielectric constant sensor according to an embodimentof the present invention.

FIG. 58 is a diagram illustrating sensing hole types of the dielectricconstant sensor according to an embodiment of the present invention.

FIGS. 59 a and 59 b area diagrams illustrating a variation in dielectricconstant depending on the sizes of sensing holes of the dielectricconstant sensor according to an embodiment of the present invention.

FIGS. 60 and 61 are diagrams illustrating a sensing cell array using thedielectric constant sensor according to an embodiment of the presentinvention.

FIG. 62 is a diagram illustrating the relationship between a sensingbitline and a reference voltage according to an embodiment of thepresent invention.

FIG. 63 is an ingredient analysis diagram illustrating the dielectricconstant sensor according to an embodiment of the present invention.

FIG. 64 is a timing diagram illustrating the read operation of thesensing cell array using the dielectric constant sensor according to anembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will be described in detail with reference to theattached drawings.

FIG. 6 is a conceptual diagram illustrating a biosensor and a sensingcell array using the same according to an embodiment of the presentinvention.

A plurality of biosensors are arranged in a sensing array comprising Ncolumns and M rows. A biosensor chip comprising a sensing cell array isprepared in a package or wafer level.

Ingredient measuring data comprising adjacent materials are exposed toeach biosensor. Thereafter, ingredient measuring data are measured ineach cell array of biosensors to electrically analyze the data using ablood ingredient analysis means.

For adjacent materials, blood, gas or other solution may be used. In anembodiment of the present invention, blood is used for the adjacentmaterial.

FIG. 7 is a diagram illustrating a package and a sensing system of asensing cell array using a biosensor according to an embodiment of thepresent invention.

In an embodiment, the sensing system includes a blood ingredientanalysis means 11 and a sensing package 8 mounting a biosensor 7thereon. The sensing package 8 is disposed on a connection board 10mounted on the blood ingredient analysis means 11 through a connectionlead 9. The biosensor 7 in the sensing package 8 is connected to theconnection lead 9 through a connection line 6.

Ingredient data of adjacent materials sensed from the biosensor 7 areoutputted into the blood ingredient analysis means 11 through theconnection lead 9 and the connection board 10. The blood ingredientanalysis means 11 separates ingredient data of measured adjacentmaterials into electrical signals characteristic of the ingredients toanalyze the ingredients of the adjacent materials quantitatively.

In an embodiment of the present invention, biosensors comprises amagnetization pair detection sensor, a magnetoresistive sensor, a giantmagnetoresistive sensor, a magnetization hole detection sensor or adielectric constant sensor. These five sensors are examples for thebiosensors.

Referring to FIGS. 8 to 18, a magnetization pair detection sensor and asensing cell array using the same according to a first embodiment of thepresent invention are described in detail.

FIG. 8 is a structural diagram illustrating a magnetization pairdetection sensor using a MTJ device according to a first embodiment ofthe present invention.

In the first embodiment, the magnetization pair detection sensorcomprises a switching device and a MTJ device 31.

The MTJ device 31 comprises a free ferromagnetic layer 28, a tunneljunction layer 29 and a fixed ferromagnetic layer 30.

The switching device comprises a NMOS transistor. The NMOS transistorhas a drain 20 connected to a sense bitline 26 through a contact line23, a gate 22 connected to a wordline 25, and a source 21 connected to abarrier conductive layer 32 formed under the MTJ device 31 through acontact line 24.

The free ferromagnetic layer 28 formed on the MTJ device 31 is connectedto a sense wordline 27. The entire device is insulated by an oxideprotective layer 33.

When portions of the magnetic field (illustrated in the figures as linesof magnetic flux and referred to herein as “magnetic field lines”) ofthe fixed ferromagnetic layer 30 are transmitted into the freeferromagnetic layer 28, different values of magnetoresistance aremeasured by the strength of the magnetic field lines differentiated byingredients of magnetic material.

FIGS. 9 a and 9 b are diagrams illustrating operational characteristicsof the magnetization pair detection sensor of FIG. 8 depending onadjacent magnetic materials.

As shown in FIG. 9 a, when the adjacent magnetic material that isadjacent to the magnetization pair detection sensor is air, the freeferromagnetic layer 28 has a small magnetic density due to air having asmall magnetic susceptibility. As a result, magnetoresistance is shownto be small. However, as shown in FIG. 9 b, when the adjacent magneticmaterial of the magnetization pair detection sensor is blood, the freeferromagnetic layer 28 has a large magnetic density due to blood havinga large magnetic susceptibility. As a result, magnetoresistance is shownto be large.

FIGS. 10 a and 10 b are diagrams illustrating ingredient separationdepending on variation in a sense wordline S_WL voltage of themagnetization pair detection sensor of FIG. 8 using the MTJ device.

When a sensing voltage is applied to a sense wordline 27, bloodingredients start to be slowly separated from a low sense wordline 27voltage by their polarization characteristics as shown in FIG. 10 a. Asshown in FIG. 10 b, the blood ingredients are separated with largerspectrum in a higher sense wordline 27 voltage.

Since the magnetic density of adjacent magnetic materials of the fixedferromagnetic layer 30 and the free ferromagnetic layer 28 isdifferentiated depending on voltage values of the sense wordline 27,different sensing resistance values are sensed. The blood ingredientanalysis means measures different sensing resistance values in themagnetization pair detection sensor to analyze the blood ingredientsquantitatively.

FIG. 11 a is a structural diagram illustrating magnetization pairdetection sensor using a GMR device according to an embodiment of thepresent invention. FIG. 11 b is a planar view diagram illustrating themagnetization pair detection sensor.

In an embodiment, the magnetization pair detection sensor comprises aswitching device and a GMR device 38.

The GMR device 38 comprises a free ferromagnetic layer 35, a conductiveresistor 36 and a fixed ferromagnetic layer 37.

The switching device comprises a NMOS transistor. The NMOS transistorcomprises a drain 20 connected to a sense bitline 26 through a contactline 23, gate 20 connected to a wordline 25 and a source 21 connected toan electrode of the conductive resistor 36 of the GMR device 38 througha contact line 24.

A sense wordline 34 is connected to the other electrode of theconductive resistor 36 of the GMR device 37. The whole device isinsulated by an oxide protective layer 39.

FIG. 11 c is a cross-sectional diagram illustrating the magnetizationpair detection sensor using the GMR device 38 when the magnetizationpair detection sensor is cross-sected along line A-A′.

When magnetic field lines of the fixed ferromagnetic layer 37 aretransmitted into the free ferromagnetic layer 35, resistance values ofthe conductive resistor 36 are determined by the strength of themagnetic field lines differentiated depending on magnetic materials.

FIGS. 12 a and 12 b are diagrams illustrating the operation principle ofthe magnetization pair detection sensor of FIG. 11 using a GMR device.

As shown in FIG. 12 a, when the adjacent magnetic material of themagnetization pair detection sensor is air, the free ferromagnetic layer35 has a small magnetic density due to air having a small magneticsusceptibility. As a result, magnetoresistance is shown to be small.However, as shown in FIG. 12 b, when the adjacent magnetic material ofthe magnetization pair detection sensor is blood, the free ferromagneticlayer 35 has a large magnetic density due to blood having a largemagnetic susceptibility. As a result, magnetoresistance is shown to belarge.

FIGS. 13 a and 13 b are diagrams illustrating ingredient separationdepending on variations in the sense wordline voltage S_WL of themagnetization pair detection sensor of FIG. 11 using the GMR device.

When a sensing voltage is applied to the sense wordline 34, bloodingredients start to be slowly separated from a low sense wordline 34voltage by their polarization characteristics as shown in FIG. 13 a. Asshown in FIG. 13 b, the blood ingredients are separated with largerspectrum in a higher sense wordline 34 voltage.

Since the magnetic density of adjacent magnetic materials of the fixedferromagnetic layer 37 and the free ferromagnetic layer 35 isdifferentiated depending on voltage values of the sense wordline 34,different sensing resistance values are sensed. The blood ingredientanalysis means measures different sensing resistance values in themagnetization pair detection sensor to analyze the blood ingredientsquantitatively.

FIG. 14 is a diagram illustrating a sensing cell array using amagnetization pair detection sensor according to an embodiment of thepresent invention.

In an embodiment, the sensing cell array using the magnetization pairdetection sensor comprises a plurality of wordlines WL_1˜WL_m arrangedparallel to a plurality of sense wordlines S_WL_1˜S_WL_m in a rowdirection, a plurality of sense bitlines S_BL1˜S_BLn arrangedperpendicular to the plurality of wordlines WL_1˜WL_m and the pluralityof sense wordlines S_WL_1˜S_WL_m.

A plurality of magnetization pair detection sensors 40 are positionedbetween the plurality of sense wordlines S_WL_1˜S_WL_m and the pluralityof wordlines WL_1˜WL_m intersecting the plurality of sense bitlinesS_BL1˜S_BLn. The magnetization pair detection sensor 40 comprises aswitching device T and a sensor S. Here, the sensor S may be a MTJ orGMR device.

The switching device T has a drain connected to the sense bitline S_BL,a source connected to a terminal of the sensor S, and a gate connectedto the wordline WL. The other terminal of the sensor S is connected tothe sense wordline S_WL.

The plurality of sense bitlines S_BL1˜S_BLn are connected one by one toa plurality of sense amplifiers SA1˜SAn. The plurality of senseamplifiers SA1˜SAn receive a plurality of reference voltages REF_1˜REF_nand a sense amplifier enable signal SEN, and outputs a sense amplifieroutput signal SA_OUT. Each of reference voltages REF_1˜REF_n hasdifferent values of reference voltages.

Each column of the sensing cell array using the magnetization pairdetection sensor allows blood ingredients to be separated and analyzedvariously by the reference voltages REF_1˜REF_n having different levels.

In this embodiment, different bias voltages are applied to the sensor Sthrough the sense wordline S_WL. The sensor S senses values of magneticflux density differentiatedly depending on the magnetic susceptibility fadjacent materials, and outputs different, current amounts. If a gate ofthe switching device T receives a wordline WL voltage, the switchingdevice T is turned on to output the different current sensed in thesensor S.

Each sense amplifier SA amplifies current applied from the sense bitlineS_BL in response to a sense amplifier enable signal SEN, and outputs asense amplifier output signal SA_OUT. The sense amplifiers SA outputdifferent sense amplifier output signals SA_OUT depending on differentreference voltages REF. As a result, each row and each column of thesensing cell array using the magnetization pair detection sensor obtainscharacteristics of different ingredients.

FIG. 15 is a diagram illustrating another example of a sensing cellarray using the magnetization pair detection sensor.

The sensing cell array of FIG. 15 further comprises a plurality ofcurrent regulators CC_1˜CC_m compared to that of FIG. 14. The currentregulator CC connected between the sense wordline S_WL and a groundvoltage terminal applies different currents to the ferromagnetic layersof the sensor S. As a result, the range of ingredient analysis in thesensor S is enlarged by microscopically regulating values ofmagnetoresistance depending on the regulation of the current applied tothe sensor S as well as the voltage of the sense wordline S_WL.

FIG. 16 is a diagram illustrating still another example of a sensingcell array using the magnetization pair detection sensor.

In the sensing cell array of FIG. 16, a sense bitline S_BL is connectedto a plurality of sense amplifiers SA1˜SAm. A plurality of differentreference voltages REF_1˜REF_m are inputted into the plurality of senseamplifiers SA1˜SAm connected to the sense bitline S_BL.

A plurality of sense amplifier output signals SA_OUT from the pluralityof sense amplifiers SA1˜SAm are outputted into encoders 50 and 51, andencoded for analysis of ingredients of adjacent materials.

FIG. 17 shows an ingredient analysis diagram of adjacent materials ofthe magnetization pair detection sensor depending on sensing outputvalues of the sensing cell array. Ingredients of adjacent materials areseparated depending on bias voltages of the plurality of sense wordlinesS_WL_1˜S_WL_m. Ingredients of adjacent materials in the plurality ofsense bitlines S_BL1˜S_BLn are separated by the plurality of differentreference voltages REF_1˜REF_n. As a result, the sensing cell arrays ofthe whole magnetization pair detection sensor separate and analyzedifferent characteristics of adjacent materials.

FIG. 18 is a timing diagram illustrating the operation of a sensing cellarray using a magnetization pair detection sensor according to anembodiment of the present invention.

When an interval t1 starts, the wordline WL, the sense wordline S_WL,the sense bitline S_BL and the reference voltage REF are activated. As aresult, the different values of magnetoresistance sensed in the sensor Sare outputted to each sense amplifier SA through the sense bitline S_BL.

In an interval t2, if the sense amplifier enable signal SEN isactivated, the sense amplifier SA amplifies different values ofmagnetoresistance to output a sense amplifier output signal SA_OUT.

As a result, the blood ingredient analysis means may analyze each senseamplifier output signal SA_OUT from the sensing cell array to analyzeingredients of adjacent materials.

When an interval t3 starts, the wordline WL, the sense wordline S_WL,the sense bitline S_BL and the reference voltage REF are inactivated.The sense amplifier enable signal SEN is disabled, and then theoperation stops.

Referring to FIG. 19 a, to 31, a magnetoresistive sensor and a sensingcell array using the same according to a second embodiment of thepresent invention are described in detail.

FIGS. 19 a and 19 b are structural diagrams illustrating amagnetoresistive sensor using a MTJ device according to an embodiment ofthe present invention.

FIG. 19 a is a cross-sectional diagram illustrating a magnetoresistivesensor using magnetic materials.

In an embodiment, the magnetoresistive sensor comprises a switchingdevice, a MTJ device 71 and magnetic material 67.

The MTJ device 71 comprises a free ferromagnetic layer 68 used as asense wordline S_WL, a tunnel junction layer 69 and a fixedferromagnetic layer 70. The switching device comprises a NMOStransistor. A drain 60 of the NMOS transistor is connected to a sensebitline 66 through contact line 63. A gate 62 of the NMOS transistor isconnected to a wordline 65. A source 61 of the NMOS transistor isconnected to a barrier conductive layer 72 formed under the MTJ device71 through a contact line 64.

Insulating materials 73 such as oxide are isolated on the freeferromagnetic layer 68 of the MTJ device 71. The free ferromagneticlayer 68 is magnetically-coupled with the magnetic materials 67 to forma sourcing magnetic field. The whole device is isolated by an oxideprotective layer 74. The magnitude of the magnetic field induced byvariations of current flowing in the free ferromagnetic layer 68 used asthe sense wordline S_WL is changed.

In the magnetoresistive sensor, the sourcing magnetic field between themagnetic materials 67 and the free ferromagnetic layer 68 is induced bycharacteristics of the magnetic materials 67 consisting of a permanentmagnet even when a voltage is not applied externally. As a result,values of magnetoresistance differentiated depending on ingredients ofmagnetic materials formed on the magnetic field are measured.

FIG. 19 b is a cross-sectional diagram illustrating a magnetoresistivesensor using a current line according to an embodiment of the presentinvention.

In an embodiment, the magnetoresistive sensor comprises a switchingdevice, a MTJ device 91 and a current line 87.

The MTJ device 91 comprises a free ferromagnetic layer 88 used as asense wordline S_WL, a tunnel junction layer 89 and a fixedferromagnetic layer 90. The switching device comprises a NMOStransistor. The NMOS transistor has a drain 80 connected to a sensebitline 86 through a contact line 83, a gate 82 connected to a wordline85, and a source 81 connected to a barrier conductive layer 92 formedunder the MTJ device 91 through a contact line 84.

Insulating materials 93 such as oxide are isolated on the freeferromagnetic layer 88 of the MTJ device 91. The free ferromagneticlayer 88 is magnetically-coupled with the current line 87, which is usedas a forcing wordline F_WL, to form a sourcing magnetic field. The wholedevice is isolated by an oxide protective layer 94.

The magnitude of the magnetic fields induced around the forcing wordlineF_WL by the strength of current flowing therein and by the variation ofcurrent flowing in the free ferromagnetic layer 88 used as a sensewordline S_WL are changed.

In the magnetoresistive sensor, the sourcing magnetic field between thefree ferromagnetic layer 88 and the current line 87 is induced only whenthe current line 87 has a current source. As a result, values ofmagnetoresistance are differentiated depending on ingredients ofmagnetic materials formed in the magnetic fields.

FIGS. 20 a and 20 b are diagrams illustrating the operationalcharacteristics of the magnetoresistive sensor of FIG. 19.

As shown in FIG. 20 a, when the adjacent magnetic material of themagnetoresistive sensor is air, the free ferromagnetic layers 68 and 88have a small magnetic density due to air having a small magneticsusceptibility. As a result, magnetoresistance is shown to be small.However, as shown in FIG. 20 b, when the adjacent magnetic material ofthe magnetoresistive sensor is bio-material (blood), the freeferromagnetic layers 68 and 88 have a large magnetic density due toblood having a large magnetic susceptibility. As a result,magnetoresistance is shown to be large.

FIGS. 21 a to 21 b are diagrams illustrating ingredient separationdepending on variations in a sense wordline S_WL voltage of themagnetoresistive sensor of FIG. 19 a using magnetic materials.

When a sensing voltage is applied to a sense wordline 68, bloodingredients start to be slowly separated from a low sense wordline 68voltage by their polarization characteristics as shown in FIG. 21 a. Asshown in FIG. 21 b, the blood ingredients are separated with largerspectrum in a higher sense wordline 68 voltage.

Since the magnetic density of adjacent magnetic materials of the fixedferromagnetic layer 70 and the free ferromagnetic layer 68 isdifferentiated depending on voltage values of the sense wordline 68,different sensing resistance values are sensed. The blood ingredientanalysis means measures different sensing resistance values in themagnetoresistive sensor to analyze the blood ingredients quantitatively.

FIGS. 22 a to 22 b are diagrams illustrating ingredient separationdepending on variations in a sense wordline S_WL (or forcing wordline)voltage of the magnetoresistive sensor of FIG. 19 b using the currentline.

When a sensing voltage is applied to the sense wordline 88 (or a forcingvoltage is applied to the current line 87), blood ingredients start tobe slowly separated from a low sense wordline 88 (or forcing wordline87) voltage by their polarization characteristics as shown in FIG. 22 a.As shown in FIG. 22 b, the blood ingredients are separated with largerspectrum in a higher sense wordline 88 (or forcing wordline 87) voltage.

Since the magnetic density of adjacent magnetic materials of the fixedferromagnetic layer 90 and the free ferromagnetic layer 88 isdifferentiated depending on the voltage values of the sense wordline 88(or forcing wordline 87), different sensing resistance values aresensed. The blood ingredient analysis means measures different sensingresistance values in the magnetoresistive sensor to analyze the bloodingredients quantitatively.

FIG. 23 a is a layout diagram illustrating the magentoresistive sensorof FIG. 19 a.

The plurality of sense wordlines S_WL formed on the MTJ devices 71 areintersecting the plurality of sense wordlines S_WL. The magneticmaterials 67 are formed on portions of the sense wordlines S_WL. Theinsulating materials 73 such as oxide between the sense wordlines S_WLand the magnetic materials 67 isolate the sense wordline S_WL and themagnetic material 67.

FIG. 23 b is a layout diagram illustrating the magentoresistive sensorof FIG. 19 b.

The plurality of sense bitlines S_BL cross the plurality of sensewordlines S_WL formed on the MTJ devices 91. The plurality of forcingwordlines F_WL are formed on the plurality of sense wordlines S_WL inparallel.

Insulating materials 93 such as oxide between the sense wordlines S_WLand the forcing wordlines F_WL isolate the sense wordlines S_WL and theforcing wordlines F_WL.

FIG. 24 is a diagram illustrating an example of the sensing cell arrayusing the magnetoresistive sensor of FIG. 19 a.

In an embodiment, the sensing cell array using the magnetoresistivesensor comprises a plurality of wordlines WL_1˜WL_m arranged parallel toa plurality of sense wordlines S_WL_1˜S_WL_m in a row direction, aplurality of sense bitlines S_BL1˜S_BLn arranged perpendicular to theplurality of wordlines WL_1˜WL_m and the plurality of sense wordlinesS_WL_1˜S_WL_m in a column direction.

A plurality of magnetoresistive sensors 100 are positioned between theplurality of sense wordlines S_WL_1˜S_WL_m and the plurality ofwordlines WL_1˜WL_m intersecting the plurality of sense bitlinesS_BL1˜S_BLn.

A magnetoresistive sensor 100 comprises a switching device T, a MTJdevice 71 and a magnetic material 67. The switching device T has a drainconnected to a sense bitline S_BL, a source connected to a terminal ofthe MTJ device 71, and a gate connected to a wordline WL. The otherterminal of the MTJ device 71 is connected to the sense wordline S_WL.The MTJ device 71 forms a magnetic field M by magnetic coupling with themagnetic material 67.

The plurality of sense bitlines S_BL1˜S_BLn are connected one by one tothe plurality of sense amplifiers SA1˜SAn. The plurality of senseamplifiers SA1˜SAn comprise a plurality of reference voltage controllers101 and 102. When a sense amplifier enable signal SEN is applied, theplurality of sense amplifiers SA1˜SAn compare reference voltages REFapplied from the reference voltage controllers 101 and 102 with outputsignals of the sense bitlines S_BL1˜S_BLn to output a plurality of senseamplifier output signals SA_OUT.

The reference voltage controller 101 controls different referencevoltages REF_1_1˜REF_1_m to output the reference voltages into a senseamplifier SA1. The reference voltage controller 102 controls differentreference voltages REF_n_1˜REF_n_m to output the reference voltages intoa sense amplifier SAn. Each reference voltage REF is set to havedifferent values so that the sense amplifiers SAn may have differentcharacteristics. In the sensing cell array using the magnetoresistivesensor, characteristics of blood ingredients are variously analyzed bydifferent levels of the reference voltages REF.

If a different bias voltage is applied to the MTJ device 71 through thesense wordline S_WL, a magnetic field is induced by magnetic couplingwith the magnetic material 67. The MTJ device 71 senses different valuesof magnetoresistance depending on the magnetic susceptibility ofadjacent materials to output different currents. If a gate of theswitching device T receives a wordline WL voltage, the switching deviceT is turned on. As a result, the switching device T outputs differentcurrents sensed in the MTJ device 71 into the sense bitline S_BL.

The sense amplifier SA compares and amplifies an output signal appliedfrom the sense bitline S_BL in response to the sense amplifier enablesignal SEN with an output signal applied from the reference voltagecontrollers 101 and 102, and then outputs a sense amplifier outputsignal SA_OUT. Each row and each column of the sensing cell array usingthe magnetoresistive sensor obtain characteristics of differentingredients.

FIG. 25 is another example illustrating the sensing cell array of themagnetoresistive sensor using magnetic materials.

The sensing cell array of FIG. 25 further comprises a plurality of A/D(Analog/Digital) converters 103 and 104, and a DSP (Digital SignalProcessor) 105. The AD converters 103 and 104 convert analog signalsapplied from each sense amplifier SA into digital signals. The DSPconverts digital signals applied from each A/D converter 103 and 104depending on digital signal processing operations. Here, the DSP 105sets different reference voltages to enlarge the ingredient analysisrange of the sensor.

FIG. 26 is an example illustrating the sensing cell array of themagnetoresistive sensor using the current line shown in FIG. 19 b.

In the sensing cell array using the magnetoresistive sensor, a pluralityof wordlines WL_1˜WL_m are, arranged parallel to a plurality of sensewordlines S_WL_1˜S_WL_m and a plurality of forcing wordlinesF_WL_1˜F_WL_m in a row direction. In a column direction, a plurality ofsense bitlines S_BL1˜S_BLn are arranged perpendicular to the pluralityof wordlines WL_1˜WL_m and the plurality of sense wordlinesS_WL_1˜S_WL_m and the plurality of forcing wordlines F_WL_1˜F_WL_m.

A plurality of magnetoresistive sensors 110 are positioned between theplurality of wordlines WL_1˜WL_m and the plurality of sense wordlinesS_WL_1˜S_WL_m intersecting the plurality of forcing wordlinesF_WL_1˜F_WL_m and the plurality of sense bitlines S_BL1˜S_BLn.

The magentoresistive sensor 110 comprises a switching device T, a MTJdevice 91 and a current line 87. The switching device T has a drainconnected to the sense bitline S_BL, a source connected to a terminal ofthe MTJ device 91, and a gate connected to the wordline WL. The otherterminal of the MTJ device 91 is connected to the sense wordline S_WL.The MTJ device 91 forms a magnetic field M by magnetic coupling with thecurrent line 87. Here, the current line 87 is connected to the forcingwordline F_WL for supplying a forcing wordline voltage to induce amagnetic field. The current controller 111 controls current supplied tothe forcing wordline F_WL. In order to form a sourcing magnetic fieldaround the current line 87, the amount of current in the sense bitlineS_BL is changed and the amount of current in the forcing wordline F_WLis fixed. Also, the amount of current in the sense bitline S_BL isfixed, and the amount of current in the forcing wordline F_WL ischanged.

The plurality of sense bitlines S_BL1˜S_BLn are connected one by one tothe plurality of sense amplifiers SA1˜SAn. The plurality of senseamplifiers SA1˜SAn comprise the plurality of reference voltagecontrollers 112 and 113. When a sense amplifier enable signal SEN isapplied, the plurality of sense amplifiers SA1˜SAn compare outputsignals from the sense bitlines S_BL1˜S_BLn with reference voltages REFapplied from the reference voltage controllers 112 and 113 to outputsense amplifier output signals SA_OUT.

The reference voltage controller 112 receives the reference voltagesREF_1_1˜REF_1_m and sense amplifier enable signals SEN to output senseamplifier output signals SA_OUT. The reference voltage controller 113receives reference voltages REF_n_1˜REF_n_m and sense amplifier enablesignals SEN to output sense amplifier output signals SA_OUT. Here, eachreference voltage REF is set to have different values so that the senseamplifiers SA may have different characteristics. In the sensing cellarray using the magnetoresistive sensor, characteristics of bloodingredients are variously analyzed by different levels of the referencevoltages REF.

In an embodiment, if different bias voltages are applied to the MTJdevice 91 through the sense wordline S_WL, and a forcing wordlinevoltage is applied through the current line 87, a magnetic field isinduced by magnetic coupling. The MTJ device 91 senses different valuesof magnetoresistance depending on magnetic susceptibility of adjacentmaterials, and outputs different current. If a gate of the switchingdevice T receives a wordline WL voltage, the switching device T isturned on to output different current sensed in the MTJ device 91 intothe sense bitline S_BL.

The sense amplifier SA compares and amplifies output signals appliedfrom the sense bitline S_BL in response to the sense amplifier enablesignal SEN with output signals applied from the reference voltagecontrollers 112 and 113 to output sense amplifier output signals SA_OUT.As a result, each row and each column of the sensing cell array usingthe magnetoresistive sensor obtain characteristics of differentingredients.

FIG. 27 is another example illustrating the sensing cell array of themagnetoresistive sensor using the current line shown in FIG. 19 b.

In an embodiment, the sensing cell array of FIG. 27 further comprises aplurality of A/D (Analog/Digital) converter 114 and 115, and a DSP(Digital Signal Processor) 116. The A/D converters 114 and 115 convertanalog signals applied from each sense amplifier SA into digitalsignals. The DSP 116 converts signals applied from each A/D converter114 and 115 depending on digital signal processing operations. Here, theDSP 116 sets different reference voltages to enlarge the ingredientanalysis range of the sensor.

FIG. 28 is an ingredient analysis diagram illustrating themagnetoresistive sensor using the magnetic materials depending onsensing output values.

Ingredients of adjacent materials are separated depending on biasvoltages of the plurality of sense wordlines S_WL_1˜S_WL_m. Ingredientsof adjacent materials in the plurality of sense bitlines S_BL1˜S_BLn areseparated by the plurality of different reference voltages REF_1˜REF_n.As a result, the sensing cell arrays of the whole magnetoresistivesensor separate and analyze different characteristics of adjacentmaterials.

FIG. 29 is an ingredient analysis diagram illustrating themagnetoresistive sensor using the current line depending on sensingoutput values.

Here, ingredients of adjacent materials are separated depending on biasvoltages of the plurality of sense wordlines S_WL_1˜S_WL_m. Ingredientsof adjacent materials are separated depending on bias voltages of theplurality of forcing wordlines F_WL_1˜F_WL_m Ingredients of adjacentmaterials in the plurality of sense bitlines S_BL1˜S_BLn are separatedby the plurality of different reference voltages REF_1˜REF_n. As aresult, the sensing cell arrays of the whole magnetoresistive sensorseparate and analyze different characteristics of adjacent materials.

FIG. 30 is a timing diagram illustrating the read operation of thesensing cell array of the magnetoresistive sensor using magneticmaterials.

When an interval t1 starts, the wordline WL, the sense wordline S_WL,the sense bitline S_BL and the reference voltage REF are activated. Thedifferent values of magnetoresistance sensed in the MTJ sensor 71 areoutputted into each sense amplifier SA through the sense bitline S_BL.

In an interval t2, if the sense amplifier enable signal SEN isactivated, different values of magnetoresistance sensed in the senseamplifier SA are amplified, and the sense amplifier output signal SA_OUTis outputted. As a result, the blood ingredient analysis means analyzeseach sense amplifier output signal SA_OUT outputted from the sensingcell array to analyze ingredients of adjacent materials.

In an interval t3, the wordline WL, the sense wordline S_WL, the sensebitline S_BL and the reference voltage REF are inactivated. The senseamplifier enable signal SEN is disabled, and the operation stops.

FIG. 31 is a timing diagram illustrating the read operation of thesensing cell array of the magnetoresistive sensor using the currentline.

In an interval t1, the wordline WL, the forcing wordline F_WL, the sensewordline S_WL, the sense bitline S_BL and the reference voltage REF areactivated. The different values of magnetoresistance sensed in the MTJsensor 91 are outputted into each sense amplifier SA through the sensebitline S_BL.

In an interval t2, if the sense amplifier enable signal SEN isactivated, different values of magnetoresistance sensed in the senseamplifier SA are amplified, and the sense amplifier output signal SA_OUTis outputted. As a result, a blood ingredient analysis means analyzeseach sense amplifier output signal SA_OUT outputted from the sensingcell array to analyze ingredients of adjacent materials.

In an interval t3, the wordline WL, the forcing wordline F_WL, the sensewordline S_WL, the sense bitline S_BL and the reference voltage REF areinactivated. Then, the sense amplifier enable signal SEN is disabled,and the operation stops.

Hereinafter, a giant magnetoresistive sensor and a sensing cell arrayusing the same according to a third embodiment of the present inventionare described referring to FIGS. 32 a to 45.

FIGS. 32 a to 32 c are structural diagrams illustrating a giantmagnetoresistive sensor using magnetic materials according to anembodiment of the present invention.

FIG. 32 a is a cross-sectional diagram illustrating a giantmagnetoresistive sensor using magnetic materials.

In an embodiment, the giant magnetoresistive sensor comprises aswitching device, a GMR device 132, a sense wordline 123 and a forcingmagnetic material 128.

Here, the GMR device 132 comprises a free ferromagnetic layer 129, aconductive resistor 130 and a fixed ferromagnetic layer 131.

The switching device comprises a NMOS transistor. The NMOS transistorhas a drain 120 connected to a sense bitline 126 through a contact line123, a gate 122 of the switching device connected to a wordline 125, anda source 121 connected to a portion of the conductive resistor 130through a contact line 124. A sense wordline 133 is formed on the otherportion of the conductive resistor 130.

The device is insulated by an oxide protective layer 134. A barrierconductive layer 127 is formed under the sense bitline 126.

FIG. 32 b is a plane view illustrating the giant magnetoresistive sensorusing magnetic materials.

The GMR device 132 is formed on the sense bitline 126, and the magneticmaterial 128 is formed on the GMR device 132.

FIG. 32 c is a cross-sectional diagram illustrating the giantmagnetoresistive sensor using magnetic materials.

Referring to FIG. 32 c, a magnetic field is formed by magnetic couplinga magnetic material 128 with the free ferromagnetic layer 129. The wholedevice is insulated by the oxide protective layer 134. As a result, thesize of magnetic field induced by variation in voltage applied to thesense wordline 133 is changed.

In the giant magnetoresistive sensor, a magnetic field is inducedbetween the free ferromagnetic layer 129 and the magnetic material 128by the magnetic material 128 consisting of a permanent magnet. As aresult, different values of magnetoresistance depending on ingredientsof magnetic materials formed on the magnetic field are measured.

FIGS. 33 a and 33 b are diagrams illustrating operation characteristicsof the giant magnetoresistive sensor of FIG. 32.

As shown in FIG. 33 a, when the adjacent magnetic material of themagnetoresistive sensor is air, the free ferromagnetic layer 129 has asmall magnetic density due to air having a small magneticsusceptibility. As a result, magnetoresistance is shown to be small.However, as shown in FIG. 33 b, when the adjacent magnetic material ofthe magnetoresistive sensor is bio-material (blood), the freeferromagnetic layer 129 has a large magnetic density due to blood havinga large magnetic susceptibility. As a result, magnetoresistance is shownto be large.

FIGS. 34 a and 34 b are diagrams illustrating ingredient separationdepending on variation in a sense wordline voltage of the giantmagnetoresistive sensor of FIG. 32.

When a sensing voltage is applied to a sense wordline 133, bloodingredients start to be slowly separated from a low sense wordline 133voltage by their polarization characteristics as shown in FIG. 34 a. Asshown in FIG. 34 b, the blood ingredients are separated with largerspectrum in a higher sense wordline 133 voltage.

In a magnetic field formed by magnetic coupling the free ferromagneticlayer 129 with the magnetic material 128, different magnetoresistivevalues are sensed since the magnetic flux density of adjacent magneticmaterials is differentiated. The blood ingredient analysis meansmeasures different sensing resistance values in the giantmagnetoresistive sensor to analyze the blood ingredients quantitatively.

FIGS. 35 a and 35 b are diagrams illustrating a giant magnetoresistivesensor using a forcing wordline according to an embodiment of thepresent invention.

In an embodiment, the giant magnetoresistive sensor comprises aswitching device, a GMR device 152, a sense wordline 153 and a forcingwordline 148.

The GMR device 152 comprises a free ferromagnetic layer 149, aconductive resistor 150 and a fixed ferromagnetic layer 151.

The switching device comprises a NMOS transistor. The NMOS transistorhas a drain 140 connected to a sense bitline 146 through a contact line143, a gate 142 connected to a wordline 145, and a source 141 connectedto one portion of a conductive resistor 150 through a contact line 144.A sense wordline 153 is formed on the other portion of the conductiveresistor 150.

The whole device is insulated by an oxide protective layer 154. Abarrier conductive layer 147 is formed under a sense bitline 146.

FIG. 35 b is a cross-sectional diagram illustrating the giantmagnetoresistive sensor using the forcing wordline.

Referring to FIG. 35 b, a magnetic field is formed around the forcingwordline 148 by magnetic coupling the free ferromagnetic layer 149 withthe forcing wordline 148 of the GMR device 152. The whole device isinsulated by an oxide protective layer 154. As a result, the size ofmagnetic field induced around the forcing wordline 148 by the magnitudeof the current applied to the forcing wordline 148 is changed.

In the giant magnetoresistive sensor, a magnetic field is induced aroundthe forcing wordline 148 by magnetic coupling the free ferromagneticlayer 149 with the forcing wordline 148 consisting of current source. Asa result, different magnetoresistive values depending on ingredients ofmagnetic materials formed on the magnetic field are measured.

FIGS. 36 a and 36 b are diagrams illustrating operation characteristicsof the giant magnetoresistive sensor of FIG. 35.

As shown in FIG. 36 a, when the adjacent magnetic material of the giantmagnetoresistive sensor is air, the free ferromagnetic layer 149 has asmall magnetic density due to air having a small magneticsusceptibility. As a result, magnetoresistance is shown to be small.However, as shown in FIG. 36 b, when the adjacent magnetic material ofthe magnetization pair detection sensor is bio material (blood), thefree ferromagnetic layer 149 has a large magnetic density due to bloodhaving a large magnetic susceptibility. As a result, magnetoresistanceis shown to be large.

FIGS. 37 a and 37 b are diagrams illustrating ingredient separationdepending on variations in a forcing wordline F_WL voltage of the giantmagnetoresistive sensor of FIG. 35 using a forcing wordline F_WL.

When a sensing voltage is applied to a forcing wordline 148, bloodingredients start to be slowly separated from a low forcing wordline 148voltage by their polarization characteristics as shown in FIG. 37 a. Asshown in FIG. 37 b, the blood ingredients are separated with largerspectrum in a higher forcing wordline 148 voltage.

As a result, in a magnetic field formed by magnetic coupling the freeferromagnetic layer 149 with the forcing wordline 148, different valuesof magnetoresistance are sensed depending on the magnetization densityof adjacent magnetic materials differentiated by voltage values of theforcing wordline 148. The blood ingredient analysis means measuresdifferent sensing resistance values in the giant magnetoresistive sensorto analyze the blood ingredients quantitatively.

FIGS. 38 and 39 are diagrams illustrating a sensing cell array using agiant magnetoresistive sensor according to an embodiment of the presentinvention.

In the sensing cell array using the giant magnetoresistive sensor, aplurality of wordlines WL_1˜WL_m are arranged parallel to a plurality ofsense wordlines S_WL_1˜S_WL_m in a row direction. In a column direction,plurality of sense bitlines S_BL1˜S_BLn are arranged perpendicular tothe plurality of wordlines WL_1˜WL_m and the plurality of sensewordlines S_WL_1˜S_WL_m.

The plurality of sense wordlines S_WL_1˜S_WL_m comprise a plurality ofsense wordline S_WL drivers 161 one by one. The plurality of sensewordlines S_WL drivers 161 apply different bias voltages to theplurality of sense wordlines S_WL, correspondingly.

A plurality of giant magnetoresistive sensors 160 are positioned betweenthe plurality of wordlines WL_1˜WL_m, the plurality of sense wordlinesS_WL_1˜S_WL_m and the plurality of sense bitlines S_BL1˜S_BLn.

A magnetoresistive sensor 160 comprises a switching device T, a GMRdevice 132 and a magnetic material 128.

The switching device T has a drain connected to the sense bitline S_BL,a source connected to a terminal of the GMR device 132, and a gateconnected to a wordline WL. The other terminal of the GMR device 132 isconnected to a sense wordline S_WL. The GMR device 132 forms a magneticfield M by magnetic coupling with the magnetic material 128.

The plurality of sense bitlines S_BL1˜S_BLn are connected one by one tothe plurality of sense amplifiers SA1˜SAn. When a sense amplifier enablesignal SEN is applied, the plurality of sense amplifiers SA1˜SAn compareand amplify output signals from the sense bitlines. S_BL1˜S_BLn withreference voltages REF to output sense amplifier output signals SA_OUT.

Each reference voltage REF is set to have different values so that thesense amplifiers may have different characteristics. In the sensing cellarray using, the magnetoresistive sensor, characteristics of bloodingredients are variously analyzed by the reference voltages REF havingdifferent levels.

In the sensing cell array, when different bias voltages are applied tothe GMR device 132 through the sense wordline S_WL, a magnetic field isinduced by magnetic coupling with the magnetic material 128. The GMRdevice 132 senses different values of magnetoresistance depending onmagnetic susceptibility of adjacent materials to output differentcurrents. If a gate of the switching device T receives a wordline WLvoltage, the switching device T is turned on to output the differentcurrents sensed in the GMR device 132 into the sense bitline S_BL.

The sense amplifiers SA compare and amplify the reference voltages REFwith output signals applied from the sense bitlines S_BL in response tothe sense amplifier enable signals SEN to output the sense amplifieroutput signals SA_OUT. As a result, each row and each column of thesensing cell array using the magnetoresistive sensor obtaincharacteristics of different ingredients.

FIG. 39 is a diagram illustrating a sensing cell array of a giantmagnetoresistive sensor using a forcing wordline according to anembodiment of the present invention.

In the sensing cell array using the magnetoresistive sensor, a pluralityof wordlines WL_1˜WL_m are, arranged parallel to a plurality of sensewordlines and a plurality of forcing wordlines F_WL_1˜F_WL_m in a rowdirection. In a column direction, plurality of sense bitlinesS_BL1˜S_BLn are arranged perpendicular to the plurality of wordlinesWL_1˜WL_m, the plurality of sense wordlines. S_WL_1˜S_WL_m and theplurality of forcing wordlines F_WL_1˜F_WL_m.

The plurality of sense wordlines S_WL_1˜S_WL_m comprises a plurality ofsense wordline S_WL drivers 171. The plurality of sense wordline S_WLdrivers 171 apply different bias voltages to the plurality of sensewordlines S_WL.

A plurality of giant magnetoresistive sensors 170 are positioned betweenthe plurality of wordlines WL_1˜WL_m, the plurality of sense wordlinesS_WL_1˜S_WL_m, the plurality of forcing wordlines F_WL_1˜F_WL_m and theplurality of sense bitlines S_BL1˜S_BLn.

A giant magnetoresistive sensor 170 comprises a switching device T, aGMR device 152 and a forcing wordline 148.

The switching device T has a drain connected to the sense bitline S_BL,a source connected to a terminal of the GMR device 152, and a gateconnected to a wordline WL. The other terminal of the GMR device 152 isconnected to the sense wordline S_WL. The GMR device 152 forms amagnetic field M by magnetic coupling with the forcing wordline 148.

The forcing wordline 148 is connected to a forcing wordline F_WLcontroller 173 configured to control current of the forcing wordlineF_WL driver 172 and the forcing wordline 148 for supplying forcingwordline voltages to induce a magnetic field.

In order to form a magnetic field around the forcing wordline 148, theamount of current in the sense bitline S_BL is changed, and the amountof current in the forcing wordline F_WL is fixed. Also, the amount ofcurrent in the sense bitline S_BL is fixed, and the amount of current inthe forcing wordline F_WL is changed.

The plurality of sense bitline S_BL1˜S_BLn are connected one by one tothe plurality of sense amplifiers SA1˜SAn. When a sense amplifier enablesignal SEN is applied, the plurality of sense amplifiers SA1˜SAn compareand amplify reference voltages REF with output signals from the sensebitline S_BL1˜S_BLn to output sense amplifier output signals SA_OUT.Each reference voltage REF is set to have different values so that thesense amplifiers SA may have different characteristics.

That is, in the sensing cell array using the giant magnetoresistivesensor, characteristics of blood ingredients are variously analyzed bythe reference voltages REF having different levels.

In an embodiment, a magnetic field is induced by magnetic coupling ifdifferent bias voltages are applied to the GMR device 152 through thesense wordline S_WL and forcing wordline voltages are applied throughthe forcing wordline 148. The GMR device 152 senses different values ofmagnetoresistance depending on magnetic susceptibility of adjacentmaterials to output different current. If a gate of the switching deviceT receives a wordline WL voltage, the switching device T is turned on tooutput different current sensed in the GMR device 152 into the sensebitlines S_BL.

The sense amplifiers SA compare and amplify reference voltages REF withoutput signals applied from the sense bitlines S_BL in response to thesense amplifier enable signals SEN. As a result, each row and eachcolumn of the sensing cell array using the giant magnetoresistive sensorobtain characteristics of different ingredients.

FIG. 40 is a layout diagram illustrating a sensing cell array of a giantmagnetoresistive sensor using a magnetic material according to anembodiment of the present invention.

A plurality of sense bitlines S_BL intersect plurality of sensewordlines S_WL. The magnetic material 128 is formed on the GMR device132.

FIG. 41 is a layout diagram illustrating a sensing cell array using aforcing wordline according to an embodiment of the present invention.

The plurality of sense bitlines S_BL intersect the plurality of sensewordlines S_WL and the plurality of forcing wordlines F_WL. On theplurality of GMR devices 152, the plurality of forcing wordlines F_WLare arranged parallel to the plurality of sense wordlines S_WL.

FIG. 42 is an ingredient analysis diagram illustrating a sensing cellarray of a giant magnetoresistive sensor using magnetic materialsaccording to an embodiment of the present invention.

Ingredients of adjacent materials are separated by bias voltages of theplurality of sense wordlines S_WL_1˜S_WL_m. Ingredients of adjacentmaterials in the plurality of sense bitlines S_BL1˜S_BLn are separatedby the plurality of different reference voltages REF_1˜REF_n. As aresult, different characteristics of adjacent materials may be analyzedin the sensing cell array of the whole giant magnetoresistive sensor.

FIG. 43 is an ingredient analysis diagram illustrating a sensing cellarray of a giant magnetoresistive sensor using a forcing wordlineaccording to an embodiment of the present invention.

Ingredients of adjacent materials are separated by bias voltages of theplurality of sense wordlines S_WL_1˜S_WL_m. Ingredients of adjacentmaterials in the plurality of forcing wordlines F_WL_1˜F_WL_m areseparated by forcing wordline F_WL voltages regulated by the F_WL driver172. Ingredients of adjacent materials in the plurality of sensebitlines S_BL1˜S_BLn are separated by the plurality of differentreference voltages REF_1˜REF_n. As a result, different characteristicsof adjacent materials may be analyzed in the sensing cell array of thewhole giant magnetoresistive sensor.

FIG. 44 is a timing diagram illustrating a read operation of a sensingcell array using a giant magnetoresistive sensor according to anembodiment of the present invention.

When an interval t1 starts, the wordline WL, the sense wordline S_WL,the sense bitline S_BL and the reference voltage REF are activated. Thedifferent values of magnetoresistance sensed in the GMR sensor 132 areoutputted into each sense amplifier SA through the sense bitlines S_BL.

In an interval t2, if the sense amplifier enable signal SEN isactivated, different values of magnetoresistance sensed in the senseamplifiers SA are amplified, and sense amplifier output signals SA_OUTare outputted. As a result, the blood ingredient analysis means analyzesthe sense amplifier output signals SA_OUT from the sensing cell array toanalyze ingredients of adjacent materials.

In an interval t3, the wordline WL, the sense wordline S_WL, the sensebitline S_BL and the reference voltage REF are inactivated. The senseamplifier enable signal SEN is disabled, and the operation stops.

FIG. 45 is a timing diagram illustrating a read operation of a sensingcell array of a giant magnetoresistive sensor using a forcing wordline.

In an interval t1, the wordline WL, the forcing wordline F_WL, the sensewordline S_WL, the sense bitline S_BL and the reference voltage REF areactivated. The different values of magnetoresistance sensed in the GMRsensor 152 are outputted into the sense amplifiers SA through the sensebitlines S_BL.

In an interval t2, if the sense amplifier enable signal SEN isactivated, different values of magnetoresistance sensed in the senseamplifiers SA are amplified, and sense amplifier output signals SA_OUTare outputted. As a result, the blood ingredient analysis means analyzesthe sense amplifier output signals SA_OUT from the sensing cell array toanalyze ingredients of adjacent materials.

In an interval t3, the wordline WL, the forcing wordline F_WL, the sensewordline S_WL, the sense bitline S_BL and the reference voltage REF areinactivated. The sense amplifier enable signal SEN is disabled, and theoperation stops.

Hereinafter, a giant magnetoresistive sensor and a sensing cell arrayusing the same according to a fourth embodiment of the present inventionare described referring to FIGS. 46 a to 55.

FIGS. 46 a and 46 b are structural diagrams illustrating a magnetizationhole detection sensor according to an embodiment of the presentinvention.

In an embodiment, the magnetization hole detection sensor comprises acurrent line 180, a free ferromagnetic layer 181, and a MTJ (GMR) device185. The current line 180 receives current to form an induction magneticfield. The free ferromagnetic layer 181 is formed on a portion of thecurrent line 180. The MTJ (or GMR) device 185 is formed on the otherportion of the current line 180.

Here, the MTJ device 185 comprises a free ferromagnetic layer 182, atunnel junction layer 183 and a fixed ferromagnetic layer 184. When apredetermined current is applied to the current line 180, an inductionmagnetic field is formed around the current line 180 through the freeferromagnetic layers 181 and 182 and adjacent materials therebetween.

As shown in FIG. 46 a, when there are materials having high magneticsusceptibility between the two free ferromagnetic layers 181 and 182,the free ferromagnetic layers 181 and 182 have a high magnetic fluxdensity. As a result, the size of induction magnetic field is shown tobe large. On the other hand, as shown in FIG. 46 b, when there arematerials having low magnetic susceptibility between the two freeferromagnetic layers 181 and 182, the free ferromagnetic layers 181 and182 have a low magnetic flux density. As a result, the size of theinduction magnetic field is shown to be small.

Accordingly, in a magnetic line of the free ferromagnetic layer 182 ofthe MTJ (or GMR) device 185, variation values of magnetoresistance areobtained by using magnetic susceptibility of intermediate adjacentmaterials differentiated depending on ingredients of adjacent materials.

FIGS. 47 a and 47 b are cross-sectional and planar view diagramsillustrating a magnetization hole detection sensor using a MTJ deviceaccording to an embodiment of the present invention.

In an embodiment, the magnetization hole detection sensor comprises aswitching device, a current line 180, a free ferromagnetic layer 181 anda MTJ device 185. The current line 180 receives a forcing wordlinecurrent to induce a magnetic field to a free ferromagnetic layer 182 ofthe MTJ device 185. Here, the MTJ device 185 comprises a freeferromagnetic layer 182, a tunnel junction layer 183 and a fixedferromagnetic layer 184. A barrier conductive layer 186 is formed underthe free ferromagnetic layer 182.

A sense wordline 187 is formed on the fixed ferromagnetic layer 184 ofthe MTJ device 185. The whole device is isolated by an oxide protectivelayer 189. A sensing hole 189 having a predetermined size is formedbetween the free ferromagnetic layer 181 and the MTJ device 185.Ingredients of adjacent materials are exposed in the sensing hole 189.

The switching device T comprises a NMOS transistor. The NMOS transistorhas a drain 190 connected to a sense bitline 196 through a contact line193, a gate 192 connected to a wordline 195, and a source 191 connectedto the barrier conductive layer 186 formed under the MTJ device 185through a contact hole 194.

FIG. 48 is a diagram illustrating a sensing hole 189 type of amagnetization hole detection sensor according to an embodiment of thepresent invention.

In an embodiment, a horizontal direction is set as variables dependingon the distance d between the free ferromagnetic layers 181 and 182, anda vertical direction is set as variables depending on the area S of thefree ferromagnetic layers 181 and 182. As a result, the sizes ofingredients of adjacent materials may be separated depending on thedistance d between the free ferromagnetic layers 181 and 182, and theamounts of ingredients corresponding to the sizes of adjacent materialsmay be analyzed quantitatively depending on the area S between the freeferromagnetic layers 181 and 182.

FIGS. 49 a and 49 b are diagrams illustrating the variation in magneticsusceptibility depending on sizes of sensing holes 189 of themagnetization hole detection sensor using the MTJ device 185 accordingto an embodiment of the present invention.

As shown in FIG. 49 a, when the distance between the free ferromagneticlayers 181 and 182 is short, the size of the sensing hole 189 becomessmaller. Ingredients of adjacent materials having a size larger than thesensing hole 189 cannot penetrate into the sensing hole 189. As aresult, ingredients of the adjacent materials 197 having the small sizemay be sensed by sensing the magnetization constant u of the adjacentmaterials 197 exposed in the sensing hole 189.

As shown in FIG. 49 b, when the distance between the free ferromagneticlayers 181 and 182 is long, the size of the sensing hole 189 becomeslarger. Ingredients of adjacent materials having a size smaller than thesensing hole 189 can penetrate into the sensing hole 189. As a result,ingredients of the adjacent materials 197 having the large size may besensed by sensing the magnetization constant u of the adjacent materials197 exposed in the sensing hole 189.

FIGS. 50 a and 50 b are structural diagrams illustrating a magnetizationhole detection sensor using a GMR device according to an embodiment ofthe present invention.

In an embodiment, the magnetization hole detection sensor comprises aswitching device, a current line 200, a free ferromagnetic layer 201 anda GMR device 205. The current line 200 receives forcing wordline currentto induce a magnetic field to a free ferromagnetic layer 202. Here, theGMR device 205 comprises a free ferromagnetic layer 202, a sensingconductive layer 203 and a fixed ferromagnetic layer 204.

A sense wordline 206 is formed on the fixed ferromagnetic layer 204 ofthe GMR device 205. The whole device is insulated by an oxide protectivelayer 207. A sensing hole 208 having a predetermined size is formedbetween the free ferromagnetic layer 201 and the GMR device 205.Ingredients of adjacent materials to be sensed are exposed in thesensing hole 208.

The switching device comprises a NMOS transistor. The NMOS transistorhas a drain 209 connected to a sense bitline 215 through a contact line212, a gate 211 connected to a wordline 214, and a source 210 connectedto the sensing conductive layer 203 of the GMR device 205 through acontact line 213.

FIGS. 51 a and 51 b are diagrams illustrating variations in magneticsusceptibility depending on the size of a sensing hole of themagnetization hole detection sensor using the GMR device 205 of FIG. 50.

As shown in FIG. 51 a, when the distance between the free ferromagneticlayers 201 and 202 is short, the size of the sensing hole 208 becomessmaller. Ingredients of adjacent materials having a size larger than thesensing hole 208 cannot penetrate into the sensing hole 208. As aresult, ingredients of the adjacent materials 217 having the small sizemay be sensed by sensing the magnetization constant u of the adjacentmaterials 217 exposed in the sensing hole 208.

As shown in FIG. 51 b, when the distance between the free ferromagneticlayers 201 and 202 is long, the size of the sensing hole 208 becomeslarger. Ingredients of adjacent materials having a size smaller than thesensing hole 208 can penetrate into the sensing hole 208. As a result,ingredients of the adjacent materials 217 having the large size may besensed by sensing the magnetization constant u of the adjacent materials217 exposed in the sensing hole 208.

FIG. 52 is a diagram illustrating an example of a sensing cell arrayusing a magnetization hole detection sensor according to an embodimentof the present invention.

In the sensing cell array using a magnetization hole detection sensor, aplurality of wordlines WL_1˜WL_m are arranged parallel to a plurality offorcing wordlines F_WL_1˜F_WL_m and a plurality of sense wordlinesS_WL_1˜S_WL_m in a row direction. In a column direction, plurality ofsense bitlines S_BL1˜S_BLn are arranged perpendicular to a plurality offorcing wordlines the plurality of sense wordlines S_WL_1˜S_WL_m and theplurality of wordlines S_BL1˜S_BLn.

A plurality of magnetization hole detection sensors 220 are positionedbetween the plurality of forcing wordlines F_WL_1˜F_WL_m, the pluralityof sense wordlines S_WL_1˜S_WL_m, the plurality of wordlines WL_1˜WL_mand the plurality of sense bitlines S_BL1˜S_BLn.

A magnetization hole detection sensor 220 comprises a switching deviceT, a sensor S and a current line L for inducing a magnetic field. Here,the sensor S may be a MTJ or GMR device.

The switching device T has a drain connected to the sense bitline S_BL,a source connected to a terminal of the sensor S, and a gate connectedto a wordline WL. The other terminal of the sensor S is connected to thesense wordline S_WL.

The current line L has a terminal connected to the forcing wordlineF_WL, and the other terminal connected to a plurality of currentregulators CC_1˜CC_m, respectively. The plurality of current regulatorsCC connected between the current line L and a ground voltage terminalapply current for generating an induction magnetic field to the currentlines L.

The plurality of sense bitlines S_BL1˜S_BLn are connected one by one toa plurality of sense amplifiers SA1˜SAn. The plurality of senseamplifiers SA1˜SAn receive a plurality of reference voltages REF_1˜REF_nand plurality of sense amplifier enable signals SEN to output senseamplifier output signals SA_OUT. Here, each of the plurality ofreference voltages REF_1˜REF_n has different reference voltage values.That is, in the sensing cell array using the magnetization holedetection sensor, characteristics of blood ingredients are variouslyanalyzed by the reference voltages REF having different levels.

If the wordline WL is enabled, the switching device T is turned on. As aresult, different current values are outputted into the sense bitlinesS_BL depending on the magnetic flux density sensed in the sensor S.

The sense amplifiers SA amplify current applied from the sense bitlinesS_BL depending on the sense amplifier enable signals SEN to output senseamplifier output signals SA_OUT. As a result, each row and each columnof the sensing cell array using the magnetization hole detection sensorobtain characteristics of different ingredients.

FIG. 53 is a diagram illustrating another example illustrating a sensingcell array using a magnetization hole detection sensor.

In the sensing cell array of FIG. 53, a sense bitline S_BL is connectedto a plurality of sense amplifiers SA1˜SAm. A sense bitline S_BL isconnected to the plurality of sense amplifiers SA1˜SAm which receive aplurality of different reference voltages REF_1˜REF_m, correspondingly.

The plurality of sense amplifier output signals SA_OUT from theplurality of sense amplifiers SA1˜SAm are outputted into encoders 221and 222, and encoded for analysis of ingredients of adjacent materialstherein.

FIG. 54 is an ingredient analysis diagram illustrating the magnetizationhole detection sensor depending on sensing output values of the sensingcell array.

Sensing holes 189 and 208 are positioned between the plurality of sensewordlines S_WL and the plurality of sense bitlines S_BL. Ingredients ofadjacent materials are separated depending on comparison of outputvalues of the sense bitlines S_BL and the different reference voltagesREF. As a result, in the sensing cell array using the magnetization holedetection sensor, different characteristics of adjacent materials may beseparated and analyzed.

FIG. 55 is a timing diagram illustrating a read operation of the sensingcell array using the magnetization hole detection sensor according to anembodiment of the present invention.

In an interval t1, the wordline WL, the sense wordline S_WL, the forcingwordline F_WL, the sense bitline S_BL and the reference voltage REF areactivated. Then, different output values sensed in the sensor S areoutputted into each sense amplifier SA through the sense bitline S_BL.

In an interval t2, if the sense amplifier enable signals SEN areactivated, different output values sensed in the sense amplifiers SA andthe reference voltages REF are compared and amplified, and the senseamplifier output signals SA_OUT are outputted. As a result, the bloodingredient analysis means analyzes each sense amplifier output signalSA_OUT from the sensing cell array to analyze ingredients of adjacentmaterials.

In an interval t3, the wordline WL, the sense wordline S_WL, the forcingwordline F_WL, the sense bitline S_BL and the reference voltage REF areinactivated. The sense amplifier enable signal SEN is disabled, and theoperation stops.

Hereinafter, a dielectric constant sensor and a sensing cell array usingthe same according to a fifth embodiment of the present invention aredescribed referring to FIGS. 56 to 64.

FIG. 56 is a diagram illustrating a dielectric constant sensor accordingto an embodiment of the present invention.

In an embodiment, the dielectric constant sensor comprises a switchingdevice T and a sensing capacitor S_C.

The switching device T comprises a NMOS transistor. The NMOS transistorhas a drain connected to a sensing bitline S_BL, a gate connected to awordline WL, and a source connected to a second electrode of the sensingcapacitor S_C. A first electrode of the sensing capacitor S_C isconnected to a sensing plate line S_PL. As a result, different sensingvoltages of the sensing bitline S_BL are detected depending on thecapacitance of the sensing capacitor S_C.

FIGS. 57 a and 57 b are cross-sectional and planar view diagramsillustrating the dielectric constant sensor according to an embodimentof the present invention.

In an embodiment, a NMOS transistor has a drain 230 connected to asensing bitline 236 through a contact line 233, a gate 232 connected toa wordline 235, and a source 231 connected to a second electrode 238 ofa sensing capacitor. A first electrode 237 of the sensing capacitor isconnected to a sensing plate line S_PL. A sensing hole 240 is formedbetween the first electrode 237, and the second electrode 238 of thesensing capacitor. The sensing hole 240 corresponds to the distancebetween the two electrodes and the area of the sensing electrode. Also,the whole device is insulated by an oxide protective layer 239.

In the dielectric constant sensor, the sensing hole 240 is formeddepending on the distance between the first electrode 237 and the secondelectrode 238 and the area of the sensing electrode. Ingredients ofadjacent materials to be sensed are exposed in the sensing hole 240.

FIG. 58 is a diagram illustrating sensing hole 240 types of thedielectric constant sensor according to an embodiment of the presentinvention.

In an embodiment, a horizontal direction is set as variables dependingon the distance d between the free ferromagnetic layers 237 and 238, anda vertical direction is set as variables depending on the area S of thefree ferromagnetic layers 237 and 238. As a result, the sizes ofingredients of adjacent materials may be separated depending on thedistance between the free ferromagnetic layers 237 and 238, and theamounts of ingredients corresponding to the sizes of adjacent materialsmay be analyzed quantitatively depending on the area S between the freeferromagnetic layers 237 and 238.

FIGS. 59 a and 59 b are diagrams illustrating variations in dielectricconstant depending on the sizes of the sensing holes of the dielectricconstant sensor according to an embodiment of the present invention.

As shown in FIG. 59 a, when the distance between the free ferromagneticlayers 237 and 238 is short, the size of the sensing hole 240 becomessmaller. Ingredients of adjacent materials having a size larger than thesensing hole 240 cannot penetrate into the sensing hole 240. As aresult, ingredients of the adjacent materials 241 having M the smallsize may be sensed by sensing the dielectric constant ∈ of the adjacentmaterials exposed in the sensing hole 240.

As shown in FIG. 59 b, when the distance between the free ferromagneticlayers 237 and 238 is long, the size of the sensing hole 240 becomeslarger. Ingredients of adjacent materials 241 having a size smaller thanthe sensing hole 240 can penetrate into the sensing hole 240. As aresult, ingredients of the adjacent materials having a large size may besensed by sensing the dielectric constant ∈ of the adjacent materials241 exposed in the sensing hole 240.

FIG. 60 is a diagram illustrating an example of sensing cell array usingthe dielectric constant sensor according to an embodiment of the presentinvention.

In a sensing cell array using a dielectric constant sensor, a pluralityof wordlines WL_1˜WL_m are arranged parallel to a plurality of sensingplatelines in a row direction. In a column direction, a plurality ofsensing bitlines S_BL1˜S_BLn are arranged perpendicular to the pluralityof wordlines WL_1˜WL_m and the plurality of sensing platelinesS_PL_1˜S_PL_m.

A plurality of dielectric constant sensors 250 are positioned betweenthe plurality of wordlines WL_1˜WL_m, the plurality of sensingplatelines S_PL_1˜S_PL_M, and the plurality of sensing bitlinesS_BL1˜S_BLn.

A dielectric constant sensor 250 comprises a switching device T and asensing capacitor S_C. The switching device T has a drain connected tothe sensing bitline S_BL, a source connected to a second electrode ofthe sensing capacitor S_C, and a gate connected to a wordline WL. Afirst electrode of the sensing capacitor S_C is connected to the sensingplateline S_PL.

The plurality of sensing bitlines S_BL1˜S_BLn are connected one by oneto a plurality of sense amplifiers SA1˜SAn. The plurality of senseamplifiers SA1˜SAn receive a plurality of reference voltages REF_1˜REF_nand plurality of sense amplifier enable signals SEN to output aplurality of sense amplifier output signals SA_OUT. Here, each of theplurality of reference voltages REF_1˜REF_n has different referencevoltage values.

Each column of the sensing cell array using the dielectric constantsensor allows blood ingredients to be separated and analyzed variouslyby the reference voltages REF_1˜REF_n having different levels.

If the wordline WL is enabled, the switching device T is turned on tooutput voltages sensed depending on the capacitance of the sensingcapacitor S_C into the sensing bitlines S_BL.

The sense amplifiers SA amplify sensing voltages applied from the sensebitlines S_BL in response to the sense amplifier enable signals SEN. Thesense amplifiers SA output different sense amplifier output signalsSA_OUT in response to different reference voltages REF. As a result,each row and each column of the sensing cell array using the dielectricconstant sensor obtain characteristics of different ingredients.

FIG. 61 is a diagram illustrating another example of a sensing cellarray using the dielectric constant sensor according to an embodiment ofthe present invention.

In the sensing cell array of FIG. 61, a sensing bitline S_BL isconnected to a plurality of sense amplifiers SA1˜SAm. Each of the senseamplifiers SA1˜SAm receives a plurality of different reference voltagesREF_1˜REF_m, correspondingly.

The plurality of sense amplifier output signals SA_OUT from theplurality of sense amplifiers SA1˜SAm are outputted into encoders 221and 222, and encoded for analysis of ingredients of adjacent materialstherein.

FIG. 62 is a diagram illustrating the relationship between a sensingbitline S_BL and a reference voltage REF according to an embodiment ofthe present invention.

A plurality of sensing bitlines S_BL1˜S_BLm output a plurality ofsensing voltage levels sensed in a sensing capacitor S_C sensed througha switching transistor T. A plurality of sense amplifiers SA compare theplurality of sensing voltage levels applied from the plurality ofsensing bitlines S_BL1˜S_BLm with a plurality of different referencevoltages REF_1˜REF_m to decide which reference voltage levelsREF_1˜REF_m correspond to sensed ingredients of adjacent materials.

FIG. 63 is an ingredient analysis diagram illustrating the dielectricconstant sensor according to an embodiment of the present invention.

A plurality of sensing holes 240 are positioned between the plurality ofsensing plateline S_PL and the plurality of sensing bitlines S_BL.Ingredients of adjacent materials are separated depending on comparisonof output values of the sensing bitlines S_BL and the differentreference voltages REF. As a result, in the sensing cell array using thedielectric constant sensor, different characteristics of adjacentmaterials may be separated and analyzed.

FIG. 64 is a timing diagram illustrating the read operation of thesensing cell array using the dielectric constant sensor according to anembodiment of the present invention.

In an interval t1, the wordline WL, the sensing plateline S_PL, thesensing bitline S_BL and the reference voltage REF are activated. Thedifferent sensing voltage values sensed in the sensing capacitor S_C areoutputted into each sense amplifier SA through the sensing bitlinesS_BL. Thereafter, the sense amplifiers SA compare and amplify thereference voltages REF with sensing voltage values inputted through thesensing bitlines S_BL.

In an interval t2, if the sense amplifier enable signal SEN isactivated, the different sensing voltage values sensed in the senseamplifiers SA are amplified, and then the sense amplifier output signalsSA_OUT are outputted.

The blood ingredient analysis means analyzes each sense amplifier outputsignal SA_OUT from the sensing cell array to analyze ingredients ofadjacent materials.

In an interval t3, the wordline WL, the sensing plateline S_PL, thesensing bitline S_BL and the reference voltage REF are inactivated. Thesense amplifier enable signal SEN is disabled, and the operation stops.

As discussed earlier, in an embodiment of sensing cell arrays, variousingredients of adjacent materials may be simultaneously analyzed withina short time. That is, ingredients of adjacent materials may be analyzedat a time level of nano-seconds using biosensors, compound ingredientanalysis sensors and skin recognizing sensors.

Additionally, since a chip size of the sensing cell array is small,samples for test can be reduced.

While the present invention is susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and described in detail herein. However, itshould be understood that the invention is not limited to the particularforms disclosed. Rather, the invention covers all modifications,equivalents, and alternatives falling within the spirit and scope of theinvention as defined in the appended claims.

1. A sensing cell array using a biosensor, comprising: a plurality ofsense wordlines arranged parallel to a plurality of wordlines; aplurality of sense bitlines arranged perpendicular to the plurality ofsense wordlines and the plurality of wordlines; a plurality ofmagnetization pair detection sensors connected to the plurality of sensewordlines, the plurality of wordlines and the plurality of sensebitlines, for sensing different values of magnetic flux densitydepending on adjacent materials; and a plurality of sense amplifiersconnected to the plurality of sense bitlines.
 2. The sensing cell arrayaccording to claim 1, wherein the plurality of magnetization pairdetection sensors comprises one or more magnetization pair detectionsensors connected to a same one of the plurality of sense bitlines. 3.The sensing cell array according to claim 1, wherein each one of theplurality of magnetization pair detection sensors comprises: a switchingdevice having a drain connected to a sense bitline and a gate connectedto a wordline; and a sensor having a first terminal connected to asource of the switching device and a second terminal connected to asense wordline.
 4. The sensing cell array according to claim 1, whereineach one of the plurality of magnetization pair detection sensorcomprises: a MTJ device comprising a free ferromagnetic layer, a tunneljunction layer and a fixed ferromagnetic layer; a first switchingtransistor formed under the fixed ferromagnetic layer of the MTJ deviceand configured to output current sensed in the MTJ device into a sensebitline; and a sense wordline formed on the free ferromagnetic layer forapplying different bias voltages to the MTJ device, wherein when amagnetic field of the fixed ferromagnetic layer is transmitted into thefree ferromagnetic layer, the current outputted from the first switchingtransistor varies according to a magnetic flux density depending onadjacent materials.
 5. The sensing cell array according to claim 4,further comprising a barrier conductive layer formed under the fixedferromagnetic layer of the MTJ cell.
 6. The sensing cell array accordingto claim 5, wherein the first switching transistor comprises: a drainconnected to the sense bitline; a source connected to the barrierconductive layer; and a gate connected to a wordline.
 7. The sensingcell array according to claim 4, further comprising a first oxideprotective layer formed on the MTJ device, the first switchingtransistor and the sense wordline.
 8. The sensing cell array accordingto claim 1, wherein each one of the plurality of magnetization pairdetection sensor comprises: a GMR device comprising a free ferromagneticlayer, a conductive resistor having a first and second electrode and afixed ferromagnetic layer; a second switching transistor formed underthe fixed ferromagnetic layer of the GMR device for outputting currentsensed in the GMR device into a sense bitline; and a sense wordlineconnected to an electrode of the conductive resistor for applyingdifferent bias voltages to the GMR device, wherein when a magnetic fieldline of the fixed ferromagnetic layer is transmitted into the freeferromagnetic layer, the current outputted from the second switchingtransistor varies according to a magnetic flux density depending onadjacent materials.
 9. The sensing cell array according to claim 8,wherein the second switching transistor comprises: a drain connected tothe sense bitline; a source connected to the other electrode of theconductive resistor; and a gate connected to a wordline.
 10. The sensingcell array according to claim 8, further comprising a second oxideprotective layer formed on the GMR device, the second switchingtransistor and the sense wordline.
 11. The sensing cell array accordingto claim 1, wherein the plurality of sense amplifiers, connectedone-by-one to the plurality of sense bitlines, and wherein whenreceiving reference voltages different from sense amplifier enablesignals amplify sensing signals applied to the plurality of sensebitlines and output sense amplifier output signals.
 12. The sensing cellarray according to claim 1, further comprising a plurality of currentregulators connected between the plurality of sense wordlines and groundvoltage terminals for regulating current applied to the plurality ofmagnetization pair detection sensors.
 13. The sensing cell arrayaccording to claim 1, wherein the plurality of sense amplifierscomprises one or more sense amplifiers connected to the same one of theplurality of sense bitlines, when receiving reference voltages differentfrom sense amplifier enable signals, the sense amplifiers amplifysensing signals applied to the sense bitline and output a plurality ofsense amplifier output signals.
 14. The sensing cell array according toclaim 13, further comprising an encoder for encoding the plurality ofsense amplifier output signals to analyze the sensing signals.
 15. Thesensing cell array according to claim 1, further comprising aningredient analyzing means for analyzing a plurality of sense amplifiersignals outputted from the plurality of sense amplifiers to analyzedifferent ingredients of adjacent materials.
 16. A sensing cell arrayusing a biosensor, comprising: a plurality of sense wordlines arrangedparallel to a plurality of wordlines; a plurality of sense bitlinesarranged perpendicular to the plurality of sense wordlines and theplurality of wordlines; a plurality of magnetoresistive sensorsconnected to the plurality of sense wordlines, the plurality ofwordlines and the plurality of sense bitlines; and a plurality of senseamplifiers connected to the plurality of sense bitlines, whereindepending on ingredients of adjacent materials formed in a magneticfield induced by magnetic coupling with magnetic materials, eachmagnetoresistive sensor senses different magnetoresistive valuesaccording to magnetic fields generated from the magnetic materials. 17.The sensing cell array according to claim 16, wherein the plurality ofmagnetoresistive sensors comprises one or more magnetoresistive sensorsconnected to the sense bitline.
 18. The sensing cell array according toclaim 16 or 17, wherein each one of the plurality of magnetoresistivesensors comprises: a switching device having a drain connected to asense bitline and a gate connected to a wordline; a first MTJ devicehaving a terminal connected to a source of the switching device and theother terminal connected to a sense wordline; and a first magneticmaterial for forming a magnetic field depending on magnetic couplingwith the first MTJ device.
 19. The sensing cell array according to claim16, wherein each one of the plurality of magnetoresistive sensorscomprises: a second MTJ device comprising a free ferromagnetic layer toreceive a sense wordline voltage, a tunnel junction layer and a fixedferromagnetic layer; a second magnetic material formed on the freeferromagnetic layer for forming a magnetic field depending on magneticcoupling with the free ferromagnetic layer; and a first switchingtransistor formed under the free ferromagnetic layer of the second MTJdevice for outputting current sensed in the second MTJ device into asense bitline, wherein the current outputted from the first switchingtransistor varies according to magnetoresistive values of adjacentmaterials formed on the magnetic field.
 20. The sensing cell arrayaccording to claim 19, further comprising a barrier conductive layerformed under the fixed ferromagnetic layer of the second MTJ device. 21.The sensing cell array according to claim 20, wherein the firstswitching transistor comprises: a drain connected to the sense bitline;a source connected to the barrier conductive layer; and a gate connectedto a wordline.
 22. The sensing cell array according to claim 19, furthercomprising an oxide protective layer formed on the second MTJ device,the first switching transistor and the second magnetic material.
 23. Thesensing cell array according to claim 19, further comprising aninsulating material formed between the second MTJ device and the secondmagnetic material.
 24. The sensing cell array according to claim 16,further comprising a plurality of reference voltage controllersconfigured to output different reference voltages into the plurality ofsense amplifiers connected one-by-one to the plurality of sensebitlines.
 25. The sensing cell array according to claim 16, furthercomprising: a plurality of analog/digital converters configured toconvert analog sense amplifier output signals outputted from theplurality of sense amplifiers into digital signals; and a digital signalprocessor for converting output signals from the plurality ofanalog/digital converters into digital signals.
 26. The sensing cellarray according to claim 16, further comprising an ingredient analyzingmeans for analyzing a plurality of sense amplifier signals outputtedfrom the plurality of sense amplifiers to analyze different ingredientsof adjacent materials.